Вопрос № 229976 - Английский язык

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The 1________________ is basically a three-section device composed of two outside sections and a middle section. The two outside 2______________ are doped so that they are either P- or N-tуре, and the middle section is doped opposite to the outside sections. Transistors are 3_________________ as NPN or PNP according to the doping of the sections or elements. When the two outside sections are N-type 4_________________ and the middle section is a P-type, the transistor is an NPN-type. When the two outside sections are P-types and the middle is N-type, the transistor is a PNP-type.

Прочитайте текст и заполните пропуски подходящими по смыслу словами
The 1________________ is basically a three-section device composed of two outside sections and a middle section. The two outside 2______________ are doped so that they are either P- or N-tуре, and the middle section is doped opposite to the outside sections. Transistors are 3_________________ as NPN or PNP according to the doping of the sections or elements. When the two outside sections are N-type semiconductors and the middle section is a P-type, the transistor is an NPN-type. When the two 4_________________ sections are P-types and the middle is N-type, the transistor is a PNP-type.

_____ is a long period of the tectonic history of the Earth (several
hundred million years long).

_____ is a natural mineral formation containing metals in the industrially useful concentration.

_____ is a way of studying of an earth's crust by means of deep chinks.

_____ is a set of holes, cracks, channels and other types of emptiness
in a mountain substance.